Silicon carbide (SiC) is a wide-bandgap semiconductor that switches faster, blocks higher voltage and conducts with lower loss than silicon at the same rating. Three properties matter most for MV power electronics:
| Property | Si IGBT | SiC MOSFET |
|---|---|---|
| Switching frequency | 2–10 kHz typical | 10–100+ kHz |
| Switching losses | Higher (tail current) | Much lower |
| Conduction at light load | VCE(sat) floor | RDS(on) scales down |
| Voltage class | Up to 6.5 kV | 1.2–3.3 kV (growing) |
| Body diode / reverse recovery | Co-packaged diode needed | Fast, low-loss body diode |
| Best fit | Very high power, cost-sensitive | High frequency, high efficiency, MV SST |
For SST applications the SiC MOSFET is the default choice: the high-frequency isolation stage depends on fast, low-loss switching.
| Module Class | Typical Use |
|---|---|
| 1200 V | LV converters, PCS, charger power stages, solar inverters |
| 1700 V | Higher-power LV, rail, three-level MV converter legs |
| 3300 V | MV converter cells, SST input stages, traction |
Ratings are derated with voltage class: expect lower nominal current per module at 3300 V than at 1200 V for the same package. Always select with the full switching waveform in mind — peak voltage stress, dv/dt and di/dt limits.
SiC switches less loss, but the loss it does make is concentrated in a small die — heat flux is high. Practical rules:
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